Course detail
Nanoelectronics
FSI-TNI Acad. year: 2025/2026 Winter semester
Electronic properties and quantum phenomena. Nanoelectronic materials (semiconductors, dielectrics, ferroelectrics, magnetoelectronics, organic molecules) and related technological and analytic methods. Novel electronic devices for processing and storing information. Sensors and displays. Solar cells.
Language of instruction
Czech
Number of ECTS credits
4
Supervisor
Department
Entry knowledge
Elementary Physics, Quantum Physics, Solid State Physics.
Rules for evaluation and completion of the course
The assessment of a student is made upon his performance in practice and quality of a discussion on topics selected at the examination (lecture notes allowed at preparation).
The presence of students at practice is obligatory and is monitored by a tutor. The way how to compensate missed practice lessons will be decided by a tutor depending on the range and content of the missed lessons.
Aims
The goal is to provide an overview of the wide field of novel materials and devices for nanoelectronics.
Students will learn the current status of the interdisciplinary field of nanoelectronics which will also help them to select their own topic (for diplomma or doctoral thesis).
The study programmes with the given course
Programme N-FIN-P: Physical Engineering and Nanotechnology, Master's, compulsory-optional
Programme MPC-NCP: Chip Design and Modern Semiconductor Technologies, Master's, compulsory-optional
Type of course unit
Lecture
26 hours, optionally
Syllabus
Semiconductors (charge carriers and their states in spatially confined semiconducting structures). Interfaces and heterostructures. Dissipative phenomena and electrical resistance.
Dielectrics (polarisation mechanisms and their frequency dependence, polarisation waves, optical properties). Ferroelectrics (spontaneous polarisation, phase transformations, domains).
Magnetoelectronics and spintronics.
Organic molecules and the structure – electronic properties relationship.
Si MOSFETs, ferroelectric FETs, quantum devices based on resonant tunneling.
Single electron devices. Carbon nanotubes as electronic devices. Molecular electronics and molecular device architecture.
Memory structures and data transmission. Sensors. Displays (OLED, field effect and plasma displays, electronic ink). Nanostructured solar cells.
Exercise
20 hours, compulsory
Syllabus
The calculation of supportive theoretical examples takes place during the whole semester.
Computer-assisted exercise
6 hours, compulsory
Syllabus
See seminars.