Course detail
Diagnostics of Nanostructures
FSI-TDN Acad. year: 2025/2026 Summer semester
The subject is aimed at the explanation of physical principles of diagnostics of 1D and 2D nanostructures suitable for a study of morphological and structural parameters, as well as of their local properties. The individual methods, fundamentals of their selection and optimization with respect with their lateral resolution will be described. In addition to scanning probe microscopic metods (STM, AFM, EFM, MFM, SNOM, etc.) and electron and ion microscopy (TEM, SEM, etc.) also optical microscopic spectroscopic techniques (e.g. confocal scanning Raman spectroscopy and photoluminiscence) and their combination will be discussed (STL, cathodoluminiscence, TERS, etc.). These methods will be demonstrated and tested as well.
Language of instruction
Czech
Number of ECTS credits
4
Supervisor
Department
Entry knowledge
Elementary Physics, Quantum Physics, Solid State Physics, Surfaces and Thin Films.
Rules for evaluation and completion of the course
The assessment of a student is made upon his performance in practice and quality of a discussion on topics selected at the colloquium (lecture notes allowed at preparation).
The presence of students at practice is obligatory and is monitored by the tutor. The way how to compensate missed practice lessons will be determined by the tutor depending on the extent and content of the missed lessons.
Aims
The goal is to give an overview of the methods providing the diagnostics of 1D and 0D nanostructures concerning both their morphological and structural characteristics and their local electronic, optical, electrical and magnetic properties as well.
Students will learn the current status of a new field called Diagnostics of Nanostructures which will also be of assistance to them for the selection of their diploma and doctoral theses.
The study programmes with the given course
Programme N-FIN-P: Physical Engineering and Nanotechnology, Master's, compulsory-optional
Programme MPC-NCP: Chip Design and Modern Semiconductor Technologies, Master's, compulsory-optional
Type of course unit
Lecture
13 hours, optionally
Syllabus
Introduction to Scanning Probe Microscopy (SPM); Scanning Tunneling Microscopy (STM) – principles of imaging by tunneling current and operation modes; scanning force microscopy (SFM) – relevant forces and operation modes; atomic force microscopy (AFM), magnetic force microscopy (MFM), electric force microscopy (EFM) and Kelvin force microscopy (KFM); scanning near field optical microscopy (SNOM); other types of SPM; principles of SPM design; electron and ion microscopy and spectroscopy (TEM/EELS, SEM/SAM,aj.); optical microscopy and spectroscopy (e.g. confocal scanning Raman spectroscopy and photoluminiscence); combined methods (STL, cathodoluminiscence, TERS, etc.).
Laboratory exercise
6 hours, compulsory
Syllabus
See seminars.
Exercise
14 hours, compulsory
Syllabus
The calculation of supportive theoretical examples and practical demonstrations and testing take place during the whole semester.
Computer-assisted exercise
6 hours, compulsory
Syllabus
See seminars.