Publication detail

Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%

KORMOŠ, L. KRATZER, M. KOSTECKI, K. OEME, M. ŠIKOLA, T. KASPER, E. SCHULZE, J. TEICHERT, C.

Czech title

Povrchová analýza epitaxně narostlých slitin GeSn s obsahem Sn mezi 15 % a 18 %

English title

Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%

Type

journal article in Web of Science

Language

en

Original abstract

Metastable GeSn layers with rather high Sn content between 15% and 18% grown on Si substrates by molecular beam epitaxy were analyzed for the morphological changes on a surface before and after reaching critical layer parameters (thickness, Sn content, and growth temperature) for surface roughening. Atomic-force microscopy investigations were performed as a function of thickness and separately for varying Sn concentrations in the GeSn layer. Epitaxial growth of metastable, uniform GeSn (15% Sn content) layers is obtained up to a critical thickness which increases from about 80 to above 200 nm by reducing the nominal growth temperature from 160 to 140 °C. Phase separation of the complete layer into tin-rich surface protrusions and a Ge-rich matrix takes place beyond the critical thickness.

Czech abstract

Práce se zabývá povrchovou analýzou epitaxně narostlých slitin GeSn s obsahem Sn mezi 15 % a 18 %.

English abstract

Metastable GeSn layers with rather high Sn content between 15% and 18% grown on Si substrates by molecular beam epitaxy were analyzed for the morphological changes on a surface before and after reaching critical layer parameters (thickness, Sn content, and growth temperature) for surface roughening. Atomic-force microscopy investigations were performed as a function of thickness and separately for varying Sn concentrations in the GeSn layer. Epitaxial growth of metastable, uniform GeSn (15% Sn content) layers is obtained up to a critical thickness which increases from about 80 to above 200 nm by reducing the nominal growth temperature from 160 to 140 °C. Phase separation of the complete layer into tin-rich surface protrusions and a Ge-rich matrix takes place beyond the critical thickness.

Keywords in Czech

GeSn; Molekulární svazková epitaxe; zdrsňování, mikroskopie atomárních sil (AFM); energiově-disperzní rentgenová spektroskopie (EDX); slitiny

Keywords in English

GeSn;molecular beam epitaxy;roughening;atomic force microscopy (AFM);energy-dispersive X-ray spectroscopy (EDX);alloys

Released

01.04.2017

ISSN

1096-9918

Volume

49

Number

4

Pages from–to

297–302

Pages count

6

BIBTEX


@article{BUT134998,
  author="Lukáš {Kormoš} and Markus {Kratzer} and Konrad {Kostecki} and Michael {Oeme} and Tomáš {Šikola} and Erich {Kasper} and Jorg {Schulze} and Christian {Teichert},
  title="Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%",
  year="2017",
  volume="49",
  number="4",
  month="April",
  pages="297--302",
  issn="1096-9918"
}