Stable a-CSi:H films with a wide range of modulus of elasticity and low internal stress

journal article in Web of Science

en

Amorphous hydrogenated silicon carbide (a-CSi:H) thin films were deposited by plasma-enhanced chemical vapor deposition using tetravinylsilane as organosilicon precursor. The mechanical properties of the thin films, namely the modulus of elasticity, hardness, and elastic recovery parameter, were determined by nanoindentation, as well as the internal stresses by scanning electron microscopy and optical profilometry. It was found that the modulus of elasticity increased from 10 to 137 GPa with increasing power (2–150 W) delivered to plasma, while the hardness increased from 1.5 to 14.5 GPa. This improvement in mechanical properties with increasing energy delivered to the plasma is related to greater fragmentation of the precursor which led to an increase in the crosslinking of the material network. The compressive internal stresses in the films reached low values of −0.04 to −0.2 GPa with increasing power (2–75 W) and an acceptable −0.5 GPa for 150 W. The elastic recovery parameter decreased with increasing power from 0.86 to 0.64, i.e., the thin films behaved more plasticity with increasing power. The modulus of elasticity and hardness were investigated in terms of the aging of the films for a period of 6 years when samples were stored under ambient conditions. No significant changes in these properties were observed. However, minor changes were observed in the indentation curves obtained for the 2 W and even less for the 10 W samples. Small changes were then also observed for the elastic recovery parameter, whose value for these samples partially decreased which may be related to postdeposition oxidation. No changes in internal stress values over time were observed. The wide range of mechanical properties of stable a-CSi:H films with low internal stress increases their application potential and their wide use as materials with tailored properties from polymer-like to tough material.

Amorphous hydrogenated silicon carbide (a-CSi:H) thin films were deposited by plasma-enhanced chemical vapor deposition using tetravinylsilane as organosilicon precursor. The mechanical properties of the thin films, namely the modulus of elasticity, hardness, and elastic recovery parameter, were determined by nanoindentation, as well as the internal stresses by scanning electron microscopy and optical profilometry. It was found that the modulus of elasticity increased from 10 to 137 GPa with increasing power (2–150 W) delivered to plasma, while the hardness increased from 1.5 to 14.5 GPa. This improvement in mechanical properties with increasing energy delivered to the plasma is related to greater fragmentation of the precursor which led to an increase in the crosslinking of the material network. The compressive internal stresses in the films reached low values of −0.04 to −0.2 GPa with increasing power (2–75 W) and an acceptable −0.5 GPa for 150 W. The elastic recovery parameter decreased with increasing power from 0.86 to 0.64, i.e., the thin films behaved more plasticity with increasing power. The modulus of elasticity and hardness were investigated in terms of the aging of the films for a period of 6 years when samples were stored under ambient conditions. No significant changes in these properties were observed. However, minor changes were observed in the indentation curves obtained for the 2 W and even less for the 10 W samples. Small changes were then also observed for the elastic recovery parameter, whose value for these samples partially decreased which may be related to postdeposition oxidation. No changes in internal stress values over time were observed. The wide range of mechanical properties of stable a-CSi:H films with low internal stress increases their application potential and their wide use as materials with tailored properties from polymer-like to tough material.

a-CSi:H thin films; Mechanical properties; Modulus of elasticity; Hardness; Elastic recovery parameter; Internal stress

25.04.2023

Elsevier B.V.

0257-8972

2022

129147

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