Publication detail

Growth of SiCAlN on Si(111) via a crystalline oxide interface

TOLLE, J. ROUČKA, R. CROZIER, P. CHIZMESHYA, A. TSONG, I. KOUVETAKIS, J.

English title

Growth of SiCAlN on Si(111) via a crystalline oxide interface

Type

journal article - other

Language

en

Original abstract

Growth of single-phase SiCAlN epitaxial films with the 2H-wurtzite structure is conducted directly on Si(111) despite the structural differences and large lattice mismatch (19%) between the two materials. Commensurate heteroepitaxy is facilitated by the conversion of native and thermally grown SiO2 layers on Si(111) into crystalline oxides by in situ reactions of the layers with Al atoms and the H3SiCN precursor, forming coherent interfaces with the Si substrate and the film. High-resolution transmission electron microscopy and electron energy-loss spectroscopy show that the amorphous SiO2 films are entirely transformed into a crystalline Si-Al-O-N framework in registry with the Si(111) surface. This crystalline interface acts as a template for nucleation and growth of epitaxial SiCAlN. Integration of wide-band-gap semiconductors with Si is readily achieved by this process. (C) 2002 American Institute of Physics.

English abstract

Growth of single-phase SiCAlN epitaxial films with the 2H-wurtzite structure is conducted directly on Si(111) despite the structural differences and large lattice mismatch (19%) between the two materials. Commensurate heteroepitaxy is facilitated by the conversion of native and thermally grown SiO2 layers on Si(111) into crystalline oxides by in situ reactions of the layers with Al atoms and the H3SiCN precursor, forming coherent interfaces with the Si substrate and the film. High-resolution transmission electron microscopy and electron energy-loss spectroscopy show that the amorphous SiO2 films are entirely transformed into a crystalline Si-Al-O-N framework in registry with the Si(111) surface. This crystalline interface acts as a template for nucleation and growth of epitaxial SiCAlN. Integration of wide-band-gap semiconductors with Si is readily achieved by this process. (C) 2002 American Institute of Physics.

Keywords in English

SILICON, FILMS

RIV year

2002

Released

16.09.2002

ISSN

0003-6951

Volume

81

Number

12

Pages count

3

BIBTEX


@article{BUT40943,
  author="J. {Tolle} and Radek {Roučka} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis},
  title="Growth of SiCAlN on Si(111) via a crystalline oxide interface",
  year="2002",
  volume="81",
  number="12",
  month="September",
  issn="0003-6951"
}