Publication detail
In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
KOLÍBAL, M. PRŮŠA, S. PLOJHAR, M. BÁBOR, P. POTOČEK, M. TOMANEC, O. KOSTELNÍK, P. MARKIN, S. BAUER, P. ŠIKOLA, T.
Czech title
In-situ analýza ultratenkých vrstev Ga užitím ToF-LEIS
English title
In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
Type
journal article - other
Language
en
Original abstract
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(111) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.
Czech abstract
In-situ analýza ultratenkých vrstev Ga užitím ToF-LEIS
English abstract
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(111) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.
Keywords in English
low energy ion scattering; AFM; growth; gallium; silicon
RIV year
2006
Released
01.08.2006
Publisher
Elsevier
ISSN
0168-583X
Journal
Nuclear Instruments and Methods in Physics Research B
Volume
249
Number
1-2
Pages from–to
318–321
Pages count
4
BIBTEX
@article{BUT43514,
author="Miroslav {Kolíbal} and Stanislav {Průša} and Martin {Plojhar} and Petr {Bábor} and Michal {Potoček} and Ondřej {Tomanec} and Petr {Kostelník} and S. N. {Markin} and P. {Bauer} and Tomáš {Šikola},
title="In situ Analysis of Ga-ultra Thin Films by ToF-LEIS",
journal="Nuclear Instruments and Methods in Physics Research B",
year="2006",
volume="249",
number="1-2",
month="August",
pages="318--321",
publisher="Elsevier",
issn="0168-583X"
}