Studium tvorby a oxidace PtSi

A study of the formation and oxidation of PtSi by SR-PES

journal article - other

en

In the paper we present the results on the formation of platinum silicide (PtSi) by means of synchrotron radiation photoelectron spectroscopy (SR-PES) and show the effect of a Pt/Si sample exposure to both a low and high-pressure oxygen atmosphere at the end of an annealing process. We have carried out a detailed analysis of high resolution photoelectron spectra of the Pt 4f and Si 2p peaks which were taken during the sample annealing at specific temperatures. In addition to the generally known Pt2Si and PtSi phases we have recognized an additional intermediate phase during the formation of Pt2Si and attributed it to the Pt3Si phase. We have proved that silicon diffuses towards the sample surface. The results of a low-pressure oxygen experiment have shown that oxygen binds only to surface silicon, however, in the case of a PtSi sample prepared externally in the ON Semiconductor labs under nitrogen/oxygen atmosphere oxygen binds not only to surface silicon but also takes over Si atoms out of the PtSi phase which results in the formation of a SiO2 layer on almost pure platinum.

Článek se zabývá tvorbou a oxidací PtSi, která byla studována pomocí fotoelektronové spektroskopie využívající synchrotronové záření. Detailní analýza spekter odhalila přítomnost přechodového silicidu Pt3Si. Po kompletní transformaci vrstvy platiny na Si substrátu na vrstvu PtSi dochází k difúzi křemíku na povrch silicidu. Vystavení této vrstvy kyslíkové atmosféře vede k jeho oxidaci za vzniku SiO2. Oxidace za atmosférického tlaku vede k ochuzení svrchní vrstvy PtSi a vzniká vrstva SiO2 na téměř čisté platinové vrstvě.

In the paper we present the results on the formation of platinum silicide (PtSi) by means of synchrotron radiation photoelectron spectroscopy (SR-PES) and show the effect of a Pt/Si sample exposure to both a low and high-pressure oxygen atmosphere at the end of an annealing process. We have carried out a detailed analysis of high resolution photoelectron spectra of the Pt 4f and Si 2p peaks which were taken during the sample annealing at specific temperatures. In addition to the generally known Pt2Si and PtSi phases we have recognized an additional intermediate phase during the formation of Pt2Si and attributed it to the Pt3Si phase. We have proved that silicon diffuses towards the sample surface. The results of a low-pressure oxygen experiment have shown that oxygen binds only to surface silicon, however, in the case of a PtSi sample prepared externally in the ON Semiconductor labs under nitrogen/oxygen atmosphere oxygen binds not only to surface silicon but also takes over Si atoms out of the PtSi phase which results in the formation of a SiO2 layer on almost pure platinum.

Platinum silicide; PtSi; Oxidation; Synchrotron radiation photoelectron spectroscopy (SR-PES); X-ray photoelectron spectroscopy (XPS)

2006

15.10.2006

0039-6028

600

20

4717–4722

6