Publication detail

Stability of hydrogen-terminated silicon surface under ambient atmosphere

KOLÍBAL, M. ČECHAL, J. BARTOŠÍK, M. MACH, J. ŠIKOLA, T.

Czech title

Stabilita vodíkem pasivovaného povrchu Si(111) za atmosférických podmínek

English title

Stability of hydrogen-terminated silicon surface under ambient atmosphere

Type

journal article - other

Language

en

Original abstract

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Czech abstract

V článku je prezentována komparativní studie různých metod přípravy pasivovaného povrchu Si (111) s ohledem na stabilitu a odolnost proti oxidaci za atmosférických podmínek. Nejlepších výsledků bylo dosaženo předleptáním vzorku ve směsi HF a NH4F a následném krátkém leptání v horkém (72 C) 40% roztoku NH4F. Takto připravený povrch je odolný proti oxidaci po dobu nejméně 3 hodin.

English abstract

In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.

Keywords in Czech

Křemíkové substráty; Chemická příprava; Leptání; Oxidace; Rentgenová fofoelektronová spektroskopie

Keywords in English

Silicon substrates; Wet-chemical pre-treatment; Etching; Oxidation; X-ray photoelectron spectroscopy

RIV year

2010

Released

15.03.2010

ISSN

0169-4332

Journal

Applied Surface Science

Volume

256

Number

11

Pages from–to

3423–2426

Pages count

4

BIBTEX


@article{BUT46912,
  author="Miroslav {Kolíbal} and Jan {Čechal} and Miroslav {Bartošík} and Jindřich {Mach} and Tomáš {Šikola},
  title="Stability of hydrogen-terminated silicon surface under ambient atmosphere",
  journal="Applied Surface Science",
  year="2010",
  volume="256",
  number="11",
  month="March",
  pages="3423--2426",
  issn="0169-4332"
}