Morfologie vrstev kobalotu na povrchu nativního SiO2 za zvýšených teplot: tvorba Co ostrůvků.

Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands

journal article - other

en

The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 – 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 – 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 – 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.

Vliv teploty při depozici a žíhání na morfologii tenkých vrstev kobaltu na vrstvě nativního SiO2 na Si substrátu byl studován pomocí AFM a XPS. Při depozici kobaltu za pokojové teploty vzniká spojitá vrstva. Při jejím žíhání při teplotách vyšších než 260 – 320 C dochází ke tvorbě ostrůvků. Depozice při teplotách v rozmezí 360 – 430 C vede ke torbě jednotlivých kobaltových ostrůvků náhoně uspořádaných na povrchu.

The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 – 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 – 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 – 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.

Kobalt, Co; Oxid křemičitý, SiO2; Ostrůvky, XPS, Fotoelektronová spektroskopie; SPM, AFM, MFM.

Cobalt, Co; Silicon dioxide, SiO2; Islands, XPS, Photoelectron spectroscopy; SPM, AFM, MFM.

2008

01.08.2008

0039-6028

602

15

2693–2698

6