Publication detail
Grain Contrast Imaging in UHV SLEEM
MIKMEKOVÁ, Š. HOVORKA, M. MÜLLEROVÁ, I. MAN, O. PANTĚLEJEV, L. FRANK, L.
Czech title
Zobrazování orientačním kontrastem v UHV SLEEM
English title
Grain Contrast Imaging in UHV SLEEM
Type
journal article - other
Language
en
Original abstract
Study of the grain structure in the equal channel angular pressing processed copper by means of the cathode lens equipped ultrahigh vacuum scanning low energy electron microscope is reported. The grain contrast was found achieving its maximum at electron energies below about 30 eV where it alternated its sign and exhibited dependence on electron energy specific for the grain orientation. The energy dependence of the electron reflectance seemed to be capable of serving as a fingerprint enabling determination of the crystalline orientation. In the cathode lens mode at hundreds of eV fine details of the microstructure are also observable including twins and low angle grain boundaries. This is explained by acquisition of high-angle backscattered slow electrons, normally not acquired in standard scanning electron microscopes. The very low energy electron reflectance is promising as an alternative to the EBSD method owing to its high resolution and fast data acquisition.
Czech abstract
V článku je popsáno pozorování mikrostruktury ultrajemnozrnné mědi, vytvořené osmi průchody zápustkou ECAP, pomocí ultravakuového nízkoenergiového rastrovacího elektronového mikroskopu vybaveného katodovou čočkou. Maximum orientačního kontrastu bylo zaznamenáno při energiích pod 30eV, kde docházelo ke změně jeho znaménka a od které vykazuje závislost na energii elektronu typickou pro danou krystalovou orientaci. Při energiích v řádu stovek eV v módu katodové čočky lze pozorovat jemné detaily mikrostruktury, jako jsou dvojčata a maloúhlové hranice. Tento fakt je dáván do souvislosti se schopností detekce zpětně odražených elektronů do velkého prostorového úhlu, která není k dispozici u konvenčních rastrovacích elektronových mikroskopů. Odraz elektronů při malých energiích je slibnou alternativní technikou k EBSD díky vysokému rozlišení a rychlému sběru dat.
English abstract
Study of the grain structure in the equal channel angular pressing processed copper by means of the cathode lens equipped ultrahigh vacuum scanning low energy electron microscope is reported. The grain contrast was found achieving its maximum at electron energies below about 30 eV where it alternated its sign and exhibited dependence on electron energy specific for the grain orientation. The energy dependence of the electron reflectance seemed to be capable of serving as a fingerprint enabling determination of the crystalline orientation. In the cathode lens mode at hundreds of eV fine details of the microstructure are also observable including twins and low angle grain boundaries. This is explained by acquisition of high-angle backscattered slow electrons, normally not acquired in standard scanning electron microscopes. The very low energy electron reflectance is promising as an alternative to the EBSD method owing to its high resolution and fast data acquisition.
Keywords in Czech
nízkoenergiová rastrovací elektronová mikroskopie, difrakce zpětně odražených elektronů (EBSD), orientační kontrast, ultrajemnozrnné materiály
Keywords in English
scanning low energy electron microscopy, electron backscatter diffraction (EBSD), grain contrast, ultra-fine grained materials
RIV year
2010
Released
25.01.2010
Publisher
The Japan Institute of Metals
Location
Ichibancho, Aoba-ku, Sendai 980-8544, Japan
ISSN
1345-9678
Journal
MATERIALS TRANSACTIONS
Volume
51
Number
2
Pages from–to
292–296
Pages count
5
BIBTEX
@article{BUT48741,
author="Šárka {Mikmeková} and Miloš {Hovorka} and Ilona {Müllerová} and Ondřej {Man} and Libor {Pantělejev} and Luděk {Frank},
title="Grain Contrast Imaging in UHV SLEEM",
journal="MATERIALS TRANSACTIONS",
year="2010",
volume="51",
number="2",
month="January",
pages="292--296",
publisher="The Japan Institute of Metals",
address="Ichibancho, Aoba-ku, Sendai 980-8544, Japan",
issn="1345-9678"
}