Publication detail

An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum

MACH, J. ŠAMOŘIL, T. VOBORNÝ, S. KOLÍBAL, M. ZLÁMAL, J. SPOUSTA, J. DITTRICHOVÁ, L. ŠIKOLA, T.

Czech title

Nízkoenergiový (30–200 eV) iontově-atomární zdoj pro depozici s asistecí iontového svazku za podmínek velmi vyského vakua.

English title

An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum

Type

journal article - other

Language

en

Original abstract

The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions

Czech abstract

Článek popisuje vyvinutý nízkoenergiový (30–200 eV) iontově-atomární zdoj pro depozici s asistecí iontového svazku za podmínek velmi vyského vakua.

English abstract

The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions

Keywords in Czech

iontově atomární zdroj; IBAD; GaN

Keywords in English

ion-atomic source; IBAD; GaN

RIV year

2011

Released

15.08.2011

ISSN

0034-6748

Volume

82

Number

8

Pages from–to

083302-1–083302-7

Pages count

7

BIBTEX


@article{BUT75796,
  author="Jindřich {Mach} and Tomáš {Šamořil} and Stanislav {Voborný} and Miroslav {Kolíbal} and Jakub {Zlámal} and Jiří {Spousta} and Libuše {Dittrichová} and Tomáš {Šikola},
  title="An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum",
  year="2011",
  volume="82",
  number="8",
  month="August",
  pages="083302-1--083302-7",
  issn="0034-6748"
}