Publication detail

TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

KOLÍBAL, M. PRŮŠA, S. BÁBOR, P. BAUER, P. ŠIKOLA, T.

Czech title

TOF-LEIS analýza ultratenkých vrstev: růst vrsten Ga a GaN na Si (111)

English title

TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

Type

conference paper

Language

en

Original abstract

In-situ monitoring of thin Ga and GaN layers growth and TOF-LEIS structural analysis.

Czech abstract

In-situ monitorování růstu tenkých vrstev Ga a GaN a jejich strukturní analýza pomocí TOF-LEIS.

English abstract

In-situ monitoring of thin Ga and GaN layers growth and TOF-LEIS structural analysis.

Keywords in English

TOF-LEIS, Ga, GaN,

RIV year

2003

Released

08.09.2003

Publisher

FÚ AV ČR

Location

Praha

Book

ECOSS 22 CD

Pages count

2

BIBTEX


@inproceedings{BUT11087,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Petr {Bauer} and Tomáš {Šikola},
  title="TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)",
  booktitle="ECOSS 22 CD",
  year="2003",
  month="September",
  publisher="FÚ AV ČR",
  address="Praha"
}