Publication detail
Growth of gallium on sillicon: A TOF-LEIS and AFM study
KOLÍBAL, M. PRŮŠA, S. BÁBOR, P. BARTOŠÍK, M. TOMANEC, O. ŠIKOLA, T.
Czech title
Růst gallia na křemíku: studie užitím TOF-LEIS a AFM
English title
Growth of gallium on sillicon: A TOF-LEIS and AFM study
Type
conference paper
Language
en
Original abstract
Growth of gallium on sillicon: A TOF-LEIS and AFM study
Czech abstract
Růst gallia na křemíku: studie užitím TOF-LEIS a AFM
English abstract
Growth of gallium on sillicon: A TOF-LEIS and AFM study
Keywords in English
Ga, TOF, structural analysis, AFM
RIV year
2004
Released
11.11.2004
Publisher
VUT v Brně
Location
Brno
ISBN
80-7355-024-5
Book
New Trend in Physics
Pages count
4
BIBTEX
@inproceedings{BUT14279,
author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Miroslav {Bartošík} and Ondřej {Tomanec} and M. {Draxler} and P. {Bauer} and Tomáš {Šikola},
title="Growth of gallium on sillicon: A TOF-LEIS and AFM study",
booktitle="New Trend in Physics",
year="2004",
month="November",
publisher="VUT v Brně",
address="Brno",
isbn="80-7355-024-5"
}