Publication detail
Plasmon-induced trap filling at grain boundaries in perovskite solar cells
YAO, K. LI, S. LIU, Z. YING, Y. DVOŘÁK, P. FEI, L. ŠIKOLA, T. HUANG, H. NORDLANDER, P. JEN, A. K. Y. LEI, D.
English title
Plasmon-induced trap filling at grain boundaries in perovskite solar cells
Type
journal article in Web of Science
Language
en
Original abstract
The deep-level traps induced by charged defects at the grain boundaries (GBs) of polycrystalline organic-inorganic halide perovskite (OIHP) films serve as major recombination centres, which limit the device performance. Herein, we incorporate specially designed poly(3-aminothiophenol)-coated gold (Au@PAT) nanoparticles into the perovskite absorber, in order to examine the influence of plasmonic resonance on carrier dynamics in perovskite solar cells. Local changes in the photophysical properties of the OIHP films reveal that plasmon excitation could fill trap sites at the GB region through photo-brightening, whereas transient absorption spectroscopy and density functional theory calculations correlate this photo-brightening of trap states with plasmon-induced interfacial processes. As a result, the device achieved the best efficiency of 22.0% with robust operational stability. Our work provides unambiguous evidence for plasmon-induced trap occupation in OIHP and reveals that plasmonic nanostructures may be one type of efficient additives to overcome the recombination losses in perovskite solar cells and thin-film solar cells in general.
English abstract
The deep-level traps induced by charged defects at the grain boundaries (GBs) of polycrystalline organic-inorganic halide perovskite (OIHP) films serve as major recombination centres, which limit the device performance. Herein, we incorporate specially designed poly(3-aminothiophenol)-coated gold (Au@PAT) nanoparticles into the perovskite absorber, in order to examine the influence of plasmonic resonance on carrier dynamics in perovskite solar cells. Local changes in the photophysical properties of the OIHP films reveal that plasmon excitation could fill trap sites at the GB region through photo-brightening, whereas transient absorption spectroscopy and density functional theory calculations correlate this photo-brightening of trap states with plasmon-induced interfacial processes. As a result, the device achieved the best efficiency of 22.0% with robust operational stability. Our work provides unambiguous evidence for plasmon-induced trap occupation in OIHP and reveals that plasmonic nanostructures may be one type of efficient additives to overcome the recombination losses in perovskite solar cells and thin-film solar cells in general.
Keywords in English
electron accumulation; recombination; nanoparticles; performance; spectroscopy; interfaces; resonance; states; films
Released
28.10.2021
Publisher
SPRINGERNATURE
Location
LONDON
ISSN
2047-7538
Volume
10
Number
1
Pages from–to
219–219
Pages count
12
BIBTEX
@article{BUT173193,
author="Petr {Viewegh} and Tomáš {Šikola},
title="Plasmon-induced trap filling at grain boundaries in perovskite solar cells",
year="2021",
volume="10",
number="1",
month="October",
pages="219--219",
publisher="SPRINGERNATURE",
address="LONDON",
issn="2047-7538"
}