Detail publikace

Plasmon-induced trap filling at grain boundaries in perovskite solar cells

YAO, K. LI, S. LIU, Z. YING, Y. DVOŘÁK, P. FEI, L. ŠIKOLA, T. HUANG, H. NORDLANDER, P. JEN, A. K. Y. LEI, D.

Anglický název

Plasmon-induced trap filling at grain boundaries in perovskite solar cells

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

en

Originální abstrakt

The deep-level traps induced by charged defects at the grain boundaries (GBs) of polycrystalline organic-inorganic halide perovskite (OIHP) films serve as major recombination centres, which limit the device performance. Herein, we incorporate specially designed poly(3-aminothiophenol)-coated gold (Au@PAT) nanoparticles into the perovskite absorber, in order to examine the influence of plasmonic resonance on carrier dynamics in perovskite solar cells. Local changes in the photophysical properties of the OIHP films reveal that plasmon excitation could fill trap sites at the GB region through photo-brightening, whereas transient absorption spectroscopy and density functional theory calculations correlate this photo-brightening of trap states with plasmon-induced interfacial processes. As a result, the device achieved the best efficiency of 22.0% with robust operational stability. Our work provides unambiguous evidence for plasmon-induced trap occupation in OIHP and reveals that plasmonic nanostructures may be one type of efficient additives to overcome the recombination losses in perovskite solar cells and thin-film solar cells in general.

Anglický abstrakt

The deep-level traps induced by charged defects at the grain boundaries (GBs) of polycrystalline organic-inorganic halide perovskite (OIHP) films serve as major recombination centres, which limit the device performance. Herein, we incorporate specially designed poly(3-aminothiophenol)-coated gold (Au@PAT) nanoparticles into the perovskite absorber, in order to examine the influence of plasmonic resonance on carrier dynamics in perovskite solar cells. Local changes in the photophysical properties of the OIHP films reveal that plasmon excitation could fill trap sites at the GB region through photo-brightening, whereas transient absorption spectroscopy and density functional theory calculations correlate this photo-brightening of trap states with plasmon-induced interfacial processes. As a result, the device achieved the best efficiency of 22.0% with robust operational stability. Our work provides unambiguous evidence for plasmon-induced trap occupation in OIHP and reveals that plasmonic nanostructures may be one type of efficient additives to overcome the recombination losses in perovskite solar cells and thin-film solar cells in general.

Klíčová slova anglicky

electron accumulation; recombination; nanoparticles; performance; spectroscopy; interfaces; resonance; states; films

Vydáno

28.10.2021

Nakladatel

SPRINGERNATURE

Místo

LONDON

ISSN

2047-7538

Ročník

10

Číslo

1

Strany od–do

219–219

Počet stran

12

BIBTEX


@article{BUT173193,
  author="Petr {Viewegh} and Tomáš {Šikola},
  title="Plasmon-induced trap filling at grain boundaries in perovskite solar cells",
  year="2021",
  volume="10",
  number="1",
  month="October",
  pages="219--219",
  publisher="SPRINGERNATURE",
  address="LONDON",
  issn="2047-7538"
}