Publication detail

Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

TANUMA, N. YASUKAWA, S. YOKOKURA, S. HASHIGUCHI, S. ŠIKULA, J. MATSUI, T. TACANO, M.

English title

Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

Type

journal article - other

Language

en

Original abstract

The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter.

English abstract

The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter.

Keywords in English

Noise, SiC, Ni/n-SiC Contact

RIV year

2001

Released

01.01.2001

ISSN

0021-4922

Journal

Japanese Journal of Applied Physics http://www.jjap.or.jp/index.shtml někdo již použil ISSN

Volume

40

Number

6A

Pages count

6

BIBTEX


@article{BUT40221,
  author="Nobuhisa {Tanuma} and Satoshi {Yasukawa} and Saburo {Yokokura} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui} and Munecazu {Tacano},
  title="Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements",
  journal="Japanese Journal of Applied Physics
http://www.jjap.or.jp/index.shtml
někdo již použil ISSN",
  year="2001",
  volume="40",
  number="6A",
  month="January",
  issn="0021-4922"
}