Detail publikace
Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
TANUMA, N. YASUKAWA, S. YOKOKURA, S. HASHIGUCHI, S. ŠIKULA, J. MATSUI, T. TACANO, M.
Anglický název
Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements
Typ
článek v časopise - ostatní, Jost
Jazyk
en
Originální abstrakt
The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter.
Anglický abstrakt
The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter.
Klíčová slova anglicky
Noise, SiC, Ni/n-SiC Contact
Rok RIV
2001
Vydáno
01.01.2001
ISSN
0021-4922
Časopis
Japanese Journal of Applied Physics http://www.jjap.or.jp/index.shtml někdo již použil ISSN
Ročník
40
Číslo
6A
Počet stran
6
BIBTEX
@article{BUT40221,
author="Nobuhisa {Tanuma} and Satoshi {Yasukawa} and Saburo {Yokokura} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui} and Munecazu {Tacano},
title="Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements",
journal="Japanese Journal of Applied Physics
http://www.jjap.or.jp/index.shtml
někdo již použil ISSN",
year="2001",
volume="40",
number="6A",
month="January",
issn="0021-4922"
}