Publication detail

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

ROUČKA, R. TOLLE, J. CROZIER, P. CHIZMESHYA, A. TSONG, I. KOUVETAKIS, J. POWELEIT, C. SMITH, D.

Czech title

Nízkoteplotní epitaxní růst kvartérních širokogapových SiCAlN

English title

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Type

journal article - other

Language

en

Original abstract

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Czech abstract

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

English abstract

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Keywords in English

DENSITY-FUNCTIONAL THEORY, MOLECULAR-BEAM EPITAXY, POLY-ATOMIC SYSTEMS, ALUMINUM NITRIDE, ELECTRONIC-STRUCTURE, SILICON-CARBIDE, SOLID-SOLUTIONS, ALLOYS, INTERFACES, AIN

RIV year

2004

Released

20.05.2002

ISSN

0031-9007

Journal

Physical Review Letters

Volume

88

Number

20

Pages count

5

BIBTEX


@article{BUT40591,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis} and C. D. {Poweleit} and D. J. {Smith},
  title="Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN",
  journal="Physical Review Letters",
  year="2002",
  volume="88",
  number="20",
  month="May",
  issn="0031-9007"
}