Detail publikace
Nízkoteplotní epitaxní růst kvartérních širokogapových SiCAlN
ROUČKA, R. TOLLE, J. CROZIER, P. CHIZMESHYA, A. TSONG, I. KOUVETAKIS, J. POWELEIT, C. SMITH, D.
Český název
Nízkoteplotní epitaxní růst kvartérních širokogapových SiCAlN
Anglický název
Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN
Typ
článek v časopise - ostatní, Jost
Jazyk
en
Originální abstrakt
Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.
Český abstrakt
Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.
Anglický abstrakt
Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.
Klíčová slova anglicky
DENSITY-FUNCTIONAL THEORY, MOLECULAR-BEAM EPITAXY, POLY-ATOMIC SYSTEMS, ALUMINUM NITRIDE, ELECTRONIC-STRUCTURE, SILICON-CARBIDE, SOLID-SOLUTIONS, ALLOYS, INTERFACES, AIN
Rok RIV
2004
Vydáno
20.05.2002
ISSN
0031-9007
Časopis
Physical Review Letters
Ročník
88
Číslo
20
Počet stran
5
BIBTEX
@article{BUT40591,
author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis} and C. D. {Poweleit} and D. J. {Smith},
title="Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN",
journal="Physical Review Letters",
year="2002",
volume="88",
number="20",
month="May",
issn="0031-9007"
}