Publication detail

A Study of Thin Oxide Films by Ellipsometry and AR XPS

TICHOPÁDEK, P. ŠIKOLA, T. NEBOJSA, A. NAVRÁTIL, K. ČECHAL, J. JURKOVIČ, P. BÁBOR, P.

Czech title

Studium tenkých oxidových vrstev pomocí elipsometrie a AR XPS

English title

A Study of Thin Oxide Films by Ellipsometry and AR XPS

Type

journal article - other

Language

en

Original abstract

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Czech abstract

Článek se zabývá aplikací jednoduchého spektroskopického elipsometru k ex-situ i in-situ měření vrstev SiO2. Elipsometrie je splolehlivým nástrojem sloužícím k monitorování chemického leptání SiO2 o tloušťce větší než 10 nm. AR XPS je naproti tomu vhodným nástrojem pro nenší tloušťky.

English abstract

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Keywords in English

spectroscopic ellipsometry, AR XPS, ultrathin films

RIV year

2002

Released

01.08.2002

ISSN

0142-2421

Journal

Surface and Interface Analysis

Volume

34

Number

1

Pages count

4

BIBTEX


@article{BUT40890,
  author="Petr {Tichopádek} and Tomáš {Šikola} and Alois {Nebojsa} and Karel {Navrátil} and Jan {Čechal} and Patrik {Jurkovič} and Petr {Bábor},
  title="A Study of Thin Oxide Films by Ellipsometry and AR XPS",
  journal="Surface and Interface Analysis",
  year="2002",
  volume="34",
  number="1",
  month="August",
  issn="0142-2421"
}