Studium tenkých oxidových vrstev pomocí elipsometrie a AR XPS

A Study of Thin Oxide Films by Ellipsometry and AR XPS

článek v časopise - ostatní, Jost

en

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Článek se zabývá aplikací jednoduchého spektroskopického elipsometru k ex-situ i in-situ měření vrstev SiO2. Elipsometrie je splolehlivým nástrojem sloužícím k monitorování chemického leptání SiO2 o tloušťce větší než 10 nm. AR XPS je naproti tomu vhodným nástrojem pro nenší tloušťky.

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

spectroscopic ellipsometry, AR XPS, ultrathin films

2002

01.08.2002

0142-2421

Surface and Interface Analysis

34

1

4