Publication detail

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

KOLÍBAL, M. PRŮŠA, S. BÁBOR, P. ŠIKOLA, T.

Czech title

Analýza ultratenkých vrstev metodou TOF-LEIS: růst vrstev Ga a GaN na Si(111)

English title

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

Type

journal article - other

Language

en

Original abstract

Paper deals with a ToF-LEIS Analysis of ultra thin films, Ga and Ga-N layer growth on Si(111)

Czech abstract

Článek se zabývá analýzou ultratenkých vrstev metodou TOF-LEIS: růstem vrstev Ga a GaN na Si(111)

English abstract

Paper deals with a ToF-LEIS Analysis of ultra thin films, Ga and Ga-N layer growth on Si(111)

Keywords in English

ToF, LEIS, Ga, GaN, silicon

RIV year

2004

Released

01.01.2004

ISSN

0039-6028

Journal

Surface Science

Volume

566-568

Number

9

Pages count

5

BIBTEX


@article{BUT42358,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Tomáš {Šikola},
  title="ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)",
  journal="Surface Science",
  year="2004",
  volume="566-568",
  number="9",
  month="January",
  issn="0039-6028"
}