Publication detail

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

FRANTA, D. OHLÍDAL, I. KLAPETEK, P.OHLÍDAL, M.

Czech title

Charakterizace tenkých oxidových vrstev na GaAs substrátech pomocí optických metod a mikroskopie atomové síly

English title

Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

Type

journal article in Web of Science

Language

en

Original abstract

The results of optical and atomic force microscopy characterization of oxide thin films prepared by thermal oxidation of GaAs single crystal wafers at a temperature of 500 deg oof Celsius in air are presented. The optical characterization is performed using multi-sample modification of the method based on combining variable angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry. It is shown that the films exhibit the rough lower boundaries and refractive index profile inhomogeneities. The spectral dependences of refractive index and extinction coefficient of these films are presented within wide spectral region, i.e., 210-900 nm. The values of thicknesses and roughness parameters characterizing the oxide films are introduced as well.

Czech abstract

Jsou prezentovány výsledky charakterizace oxidových tenkých vrstev připravených termickou oxidací GaAs monokrystalických destiček při teplotě 500 stupňů Celsia ve vzduchu. Optická charakterizace je provedena užitím modifikace metody založené na kombinaci spektrální elipsometrie s proměnným úhlem dopadu a spektrální reflektometrie při téměř kolmém dopadu. Je ukázáno, že vrstvy vykazují drsná spodní rozhraní a nehomogenity v profilu indexu lomu. Spektrální závislosti indexu lomu a extinkčního koeficientu těchto vrstev jsou prezentovány v široké spektrální oblasti 210-900 nm. Jsou rovněž uvedeny tloušťky a parametry drsnosti charakterizující tyto oxidové vrstvy.

English abstract

The results of optical and atomic force microscopy characterization of oxide thin films prepared by thermal oxidation of GaAs single crystal wafers at a temperature of 500 deg oof Celsius in air are presented. The optical characterization is performed using multi-sample modification of the method based on combining variable angle spectroscopic ellipsometry and near-normal spectroscopic reflectometry. It is shown that the films exhibit the rough lower boundaries and refractive index profile inhomogeneities. The spectral dependences of refractive index and extinction coefficient of these films are presented within wide spectral region, i.e., 210-900 nm. The values of thicknesses and roughness parameters characterizing the oxide films are introduced as well.

Keywords in Czech

GaAs oxidové vrstvy , elipsometrie, reflektometrie, AFM, optické konstanty, drsnost

Keywords in English

GaAs oxide films, ellipsometry, reflectometry, AFM, optical constants, roughness

RIV year

2004

Released

01.01.2004

Publisher

John Wiley & Sons, Ltd.

Location

CHICHESTER PO19 8SQ, W SUSSEX, ENGLAND

ISSN

0142-2421

Journal

Surface and Interface Analysis

Volume

36

Number

8

Pages from–to

1203–1206

Pages count

4

BIBTEX


@article{BUT46462,
  author="Daniel {Franta} and Ivan {Ohlídal} and Petr {Klapetek} and Miloslav {Ohlídal},
  title="Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy",
  journal="Surface and Interface Analysis",
  year="2004",
  volume="36",
  number="8",
  month="January",
  pages="1203--1206",
  publisher="John Wiley & Sons, Ltd.",
  address="CHICHESTER PO19 8SQ, W SUSSEX, ENGLAND",
  issn="0142-2421"
}