Publication detail

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

MACH, J. ČECHAL, J. KOLÍBAL, M. POTOČEK, M. ŠIKOLA, T.

Czech title

Vznik Ga nanoclusterů na Si(100) indukovaný atomárním vodíkem

English title

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

Type

journal article - other

Language

en

Original abstract

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases – (2x3), (2x2) and (8x1) – as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 – 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Czech abstract

Byl pozorván vznik Ga nanoclusterů na Si(100) z povrchových struktur (2x3)-Ga a (2x2)-Ga indukovaný atomárním vodíkem. Dochází k záměně vodíku za gallium ve vazbách ke křemíku.

English abstract

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases – (2x3), (2x2) and (8x1) – as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 – 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Keywords in Czech

Gallium, Ga; Křemík, Si(100); Vodík; Povrchová struktura; Nanoklastr; Difrakce pomalých elektronů (LEED); Fotoeletronová spektroskopie (SR-PES); Fotoemise

Keywords in English

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

RIV year

2008

Released

15.05.2008

ISSN

0039-6028

Journal

Surface Science

Volume

602

Number

10

Pages from–to

1898–1902

Pages count

5

BIBTEX


@article{BUT46749,
  author="Jindřich {Mach} and Jan {Čechal} and Miroslav {Kolíbal} and Michal {Potoček} and Tomáš {Šikola},
  title="Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface",
  journal="Surface Science",
  year="2008",
  volume="602",
  number="10",
  month="May",
  pages="1898--1902",
  issn="0039-6028"
}