Vznik Ga nanoclusterů na Si(100) indukovaný atomárním vodíkem

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

článek v časopise - ostatní, Jost

en

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases – (2x3), (2x2) and (8x1) – as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 – 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Byl pozorván vznik Ga nanoclusterů na Si(100) z povrchových struktur (2x3)-Ga a (2x2)-Ga indukovaný atomárním vodíkem. Dochází k záměně vodíku za gallium ve vazbách ke křemíku.

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases – (2x3), (2x2) and (8x1) – as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 – 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Gallium, Ga; Křemík, Si(100); Vodík; Povrchová struktura; Nanoklastr; Difrakce pomalých elektronů (LEED); Fotoeletronová spektroskopie (SR-PES); Fotoemise

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

2008

15.05.2008

0039-6028

Surface Science

602

10

1898–1902

5