Publication detail

Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis

ČECHAL, J. MATLOCHA, T. POLČÁK, J. KOLÍBAL, M. TOMANEC, O. KALOUSEK, R. DUB, P. ŠIKOLA, T.

Czech title

Characterizace oxidovaných galliových kapek na křemíkovém substrátu: model s elipsoidálním tvarem kapek pro úhlově závislou fotoelektronovou spektroskopii

English title

Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis

Type

journal article - other

Language

en

Original abstract

Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks – Ga 3d and Ga 2p – were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.

Czech abstract

Byla studována depozice a oxidace kapek gallia na povrchu Si(111) pomocí rentgenové fotoelektronové spektroskopie. Je prezentován model s elipsoidálním tvarem kapek pro úhlově závislou fotoelektronovou spektroskopii, jenž je v zápětí použitý k vlastní analýze morfologie připravené vrstvy.

English abstract

Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks – Ga 3d and Ga 2p – were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.

Keywords in Czech

Rentgenová fotoelektronová spektroskopie, XPS; Gallium, Ga; Oxid gallitý, Ga2O3; Povrchové struktury; Modely; Simulace

Keywords in English

X-ray photoelectron spectroscopy, XPS; Gallium, Ga; Gallium Oxide, Ga2O3; Surface structures; Models; Calculations

RIV year

2009

Released

30.01.2009

ISSN

0040-6090

Journal

Thin Solid Films

Volume

517

Number

6

Pages from–to

1928–1934

Pages count

7

BIBTEX


@article{BUT48893,
  author="Jan {Čechal} and Tomáš {Matlocha} and Josef {Polčák} and Miroslav {Kolíbal} and Ondřej {Tomanec} and Radek {Kalousek} and Petr {Dub} and Tomáš {Šikola},
  title="Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis",
  journal="Thin Solid Films",
  year="2009",
  volume="517",
  number="6",
  month="January",
  pages="1928--1934",
  issn="0040-6090"
}