Detail publikace
Characterizace oxidovaných galliových kapek na křemíkovém substrátu: model s elipsoidálním tvarem kapek pro úhlově závislou fotoelektronovou spektroskopii
ČECHAL, J. MATLOCHA, T. POLČÁK, J. KOLÍBAL, M. TOMANEC, O. KALOUSEK, R. DUB, P. ŠIKOLA, T.
Český název
Characterizace oxidovaných galliových kapek na křemíkovém substrátu: model s elipsoidálním tvarem kapek pro úhlově závislou fotoelektronovou spektroskopii
Anglický název
Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
Typ
článek v časopise - ostatní, Jost
Jazyk
en
Originální abstrakt
Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks – Ga 3d and Ga 2p – were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.
Český abstrakt
Byla studována depozice a oxidace kapek gallia na povrchu Si(111) pomocí rentgenové fotoelektronové spektroskopie. Je prezentován model s elipsoidálním tvarem kapek pro úhlově závislou fotoelektronovou spektroskopii, jenž je v zápětí použitý k vlastní analýze morfologie připravené vrstvy.
Anglický abstrakt
Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks – Ga 3d and Ga 2p – were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.
Klíčová slova česky
Rentgenová fotoelektronová spektroskopie, XPS; Gallium, Ga; Oxid gallitý, Ga2O3; Povrchové struktury; Modely; Simulace
Klíčová slova anglicky
X-ray photoelectron spectroscopy, XPS; Gallium, Ga; Gallium Oxide, Ga2O3; Surface structures; Models; Calculations
Rok RIV
2009
Vydáno
30.01.2009
ISSN
0040-6090
Časopis
Thin Solid Films
Ročník
517
Číslo
6
Strany od–do
1928–1934
Počet stran
7
BIBTEX
@article{BUT48893,
author="Jan {Čechal} and Tomáš {Matlocha} and Josef {Polčák} and Miroslav {Kolíbal} and Ondřej {Tomanec} and Radek {Kalousek} and Petr {Dub} and Tomáš {Šikola},
title="Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis",
journal="Thin Solid Films",
year="2009",
volume="517",
number="6",
month="January",
pages="1928--1934",
issn="0040-6090"
}