Publication detail

Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

FRANTA, D. NEČAS, D. OHLÍDAL, I. HRDLIČKA, M. PAVLIŠTA, M. FRUMAR, M. OHLÍDAL, M.

Czech title

Kombinovaná metoda spektroskopické elipsometrie a fotometrie jako efektivní prostředek pro optickou charakterizaci chalgogenních tenkých vrstev

English title

Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

Type

journal article in Web of Science

Language

en

Original abstract

The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.

Czech abstract

Je provedena optická charakterizace As33Se67 a Ge2Sb2Te5 chalkogenních tenkých vrstev pomocí kombinované metody VASE a SR. Tato metoda umožňuje určit strukturní a dispersní parametry popisující tenké vrstvy s rozličnými defekty. Strukturní model zahrnuje drsnost a tloušťkovou nehomogenitu. Disperzní modely jsou založeny na parametrizaci hustoty elektronových stavů. Je ukázáno, že tato metoda je mocný prostředek optické charakterizace tenkých vrstev s neuspořádanou strukturou.

English abstract

The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.

Keywords in Czech

Elipsometrie, fotometrie, chalkogenidy, tenké vrstvy

Keywords in English

Ellipsometry; Photometry; Chalcogenige; Thin film

RIV year

2009

Released

25.12.2009

Publisher

NATL INST OPTOELECTRONICS

Location

BUCHAREST-MAGURELE 76900, ROMANIA

ISSN

1454-4164

Journal

Journal of Optoelectronics and Advanced Materials

Volume

11

Number

12

Pages from–to

1891–1898

Pages count

8

BIBTEX


@article{BUT49384,
  author="Daniel {Franta} and David {Nečas} and Ivan {Ohlídal} and Martin {Hrdlička} and Martin {Pavlišta} and Miloslav {Frumar} and Miloslav {Ohlídal},
  title="Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films",
  journal="Journal of Optoelectronics and Advanced Materials",
  year="2009",
  volume="11",
  number="12",
  month="December",
  pages="1891--1898",
  publisher="NATL INST OPTOELECTRONICS",
  address="BUCHAREST-MAGURELE 76900, ROMANIA",
  issn="1454-4164"
}