Detail publikace
Kombinovaná metoda spektroskopické elipsometrie a fotometrie jako efektivní prostředek pro optickou charakterizaci chalgogenních tenkých vrstev
FRANTA, D. NEČAS, D. OHLÍDAL, I. HRDLIČKA, M. PAVLIŠTA, M. FRUMAR, M. OHLÍDAL, M.
Český název
Kombinovaná metoda spektroskopické elipsometrie a fotometrie jako efektivní prostředek pro optickou charakterizaci chalgogenních tenkých vrstev
Anglický název
Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
en
Originální abstrakt
The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.
Český abstrakt
Je provedena optická charakterizace As33Se67 a Ge2Sb2Te5 chalkogenních tenkých vrstev pomocí kombinované metody VASE a SR. Tato metoda umožňuje určit strukturní a dispersní parametry popisující tenké vrstvy s rozličnými defekty. Strukturní model zahrnuje drsnost a tloušťkovou nehomogenitu. Disperzní modely jsou založeny na parametrizaci hustoty elektronových stavů. Je ukázáno, že tato metoda je mocný prostředek optické charakterizace tenkých vrstev s neuspořádanou strukturou.
Anglický abstrakt
The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.
Klíčová slova česky
Elipsometrie, fotometrie, chalkogenidy, tenké vrstvy
Klíčová slova anglicky
Ellipsometry; Photometry; Chalcogenige; Thin film
Rok RIV
2009
Vydáno
25.12.2009
Nakladatel
NATL INST OPTOELECTRONICS
Místo
BUCHAREST-MAGURELE 76900, ROMANIA
ISSN
1454-4164
Časopis
Journal of Optoelectronics and Advanced Materials
Ročník
11
Číslo
12
Strany od–do
1891–1898
Počet stran
8
BIBTEX
@article{BUT49384,
author="Daniel {Franta} and David {Nečas} and Ivan {Ohlídal} and Martin {Hrdlička} and Martin {Pavlišta} and Miloslav {Frumar} and Miloslav {Ohlídal},
title="Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films",
journal="Journal of Optoelectronics and Advanced Materials",
year="2009",
volume="11",
number="12",
month="December",
pages="1891--1898",
publisher="NATL INST OPTOELECTRONICS",
address="BUCHAREST-MAGURELE 76900, ROMANIA",
issn="1454-4164"
}