Publication detail
A Study of Gallium Growth on Si(111) 7x7 by SRPES
ČECHAL, J. BÁBOR, P. SPOUSTA, J. ŠIKOLA, T.
Czech title
Studium růstu gallia na Si(111) 7x7 pomocí SRPES
English title
A Study of Gallium Growth on Si(111) 7x7 by SRPES
Type
presentation
Language
en
Original abstract
We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures – room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural and morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR – PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand.
Czech abstract
Prezentace se zabývá studiem počátečních stádií růstu velmi tenkých vrstev gallia pomocí SR-PES a LEED.
English abstract
We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures – room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural and morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR – PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand.
Keywords in English
Ga, Si(111), SRPES, photoelectron spectroscopy
Released
25.09.2005
Location
Vienna
Edition number
1
Pages from–to
259–259
Pages count
1