Studium růstu gallia na Si(111) 7x7 pomocí SRPES

A Study of Gallium Growth on Si(111) 7x7 by SRPES

audiovizuální tvorba

en

We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures – room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural and morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR – PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand.

Prezentace se zabývá studiem počátečních stádií růstu velmi tenkých vrstev gallia pomocí SR-PES a LEED.

We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures – room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural and morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR – PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand.

Ga, Si(111), SRPES, photoelectron spectroscopy

25.09.2005

Vienna

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259–259

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