Publication detail
Application of ToF - LEIS for Analysis of Surfaces and Ultra Thin Films
PRŮŠA, S. ŠIKOLA, T. BÁBOR, P.
Czech title
Aplikace ToF - LEIS pro analýzu povrchů a velmi tenkých vrstev.
English title
Application of ToF - LEIS for Analysis of Surfaces and Ultra Thin Films
Type
conference paper
Language
en
Original abstract
Low Energy Ion Scattering (LEIS) belongs to a wide group of surface science analytical techniques. Low detection limit and extreme surface sensitivity are the main advantages of LEIS. Atomic composition of analysed surfaces is determined from the energy distribution of the scattered rare gas ions. Their kinetic energy can be measured by a Time-of-Flight (ToF) spectrometer. Capabilities of the ToF LEIS spectrometer will be demonstrated at analysis of gallium layers evaporated on a SiO2 substrate
Czech abstract
Představeny jsou možnosti měření Ga vrstev na SiO2 pomocí ToF LEIS Spektrometru
English abstract
Low Energy Ion Scattering (LEIS) belongs to a wide group of surface science analytical techniques. Low detection limit and extreme surface sensitivity are the main advantages of LEIS. Atomic composition of analysed surfaces is determined from the energy distribution of the scattered rare gas ions. Their kinetic energy can be measured by a Time-of-Flight (ToF) spectrometer. Capabilities of the ToF LEIS spectrometer will be demonstrated at analysis of gallium layers evaporated on a SiO2 substrate
Keywords in English
ToF, LEIS, sputtering, Ga, SiO2
RIV year
2002
Released
15.11.2001
Publisher
FEI VUT v Brně
Location
Brno
ISBN
80-214-1992-X
Book
Sborník příspěvků konference Nové trendy ve fyzice
Pages count
6
BIBTEX
@inproceedings{BUT6506,
author="Stanislav {Průša} and Tomáš {Šikola} and Petr {Bábor},
title="Application of ToF – LEIS for Analysis of Surfaces and Ultra Thin Films",
booktitle="Sborník příspěvků konference Nové trendy ve fyzice",
year="2001",
month="November",
publisher="FEI VUT v Brně",
address="Brno",
isbn="80-214-1992-X"
}