Publication detail

Low Frequency Noise of Tantalum Capacitors

ŠIKULA, J. HLÁVKA, J. PAVELKA, J. SEDLÁKOVÁ, V. GRMELA, L. TACANO, M. HASHIGUCHI, S.

English title

Low Frequency Noise of Tantalum Capacitors

Type

conference paper

Language

en

Original abstract

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta – ta2O5 – MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.

English abstract

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta – ta2O5 – MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.

Keywords in English

Noise, tantalum capcitors, self-healing, reliability

RIV year

2001

Released

01.01.2001

Publisher

Electronic Components Institute Internationale Ltd.

Location

Kodaň, Dánsko

Book

Proceedings of CARTS-Euro 2001

Pages count

4

BIBTEX


@inproceedings{BUT6837,
  author="Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi},
  title="Low Frequency Noise of Tantalum Capacitors",
  booktitle="Proceedings of CARTS-Euro 2001",
  year="2001",
  month="January",
  publisher="Electronic Components Institute Internationale Ltd.",
  address="Kodaň, Dánsko"
}