Detail publikace
Low Frequency Noise of Tantalum Capacitors
ŠIKULA, J. HLÁVKA, J. PAVELKA, J. SEDLÁKOVÁ, V. GRMELA, L. TACANO, M. HASHIGUCHI, S.
Anglický název
Low Frequency Noise of Tantalum Capacitors
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
en
Originální abstrakt
A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta – ta2O5 – MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.
Anglický abstrakt
A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta – ta2O5 – MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.
Klíčová slova anglicky
Noise, tantalum capcitors, self-healing, reliability
Rok RIV
2001
Vydáno
01.01.2001
Nakladatel
Electronic Components Institute Internationale Ltd.
Místo
Kodaň, Dánsko
Kniha
Proceedings of CARTS-Euro 2001
Počet stran
4
BIBTEX
@inproceedings{BUT6837,
author="Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi},
title="Low Frequency Noise of Tantalum Capacitors",
booktitle="Proceedings of CARTS-Euro 2001",
year="2001",
month="January",
publisher="Electronic Components Institute Internationale Ltd.",
address="Kodaň, Dánsko"
}