Detail publikace
FIB-SIMS kvantifikace pomocí TOF-SIMS s využitím Ar a Xe plazmových zdrojů
STEVIE, F. SEDLÁČEK, L. BÁBOR, P. JIRUŠE, J. PRINCIPE, E. KLOSOVÁ, K.
Český název
FIB-SIMS kvantifikace pomocí TOF-SIMS s využitím Ar a Xe plazmových zdrojů
Anglický název
FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
en
Originální abstrakt
A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra-deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300-nm SiO2/Si implanted with BF2.
Český abstrakt
Publikace pojednává o použití TOF-SIMS spektrometru a plasmových zdrojů (Ar, Xe) ke kvantitativní analýze prvkového složení zkoumaných materiálů metodou hmotnostní spektroskopie sekundárních iontů.
Anglický abstrakt
A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra-deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300-nm SiO2/Si implanted with BF2.
Klíčová slova anglicky
SIMS depth profiling; plasma ion source; TOF-SIMS analyzer; FIB-SIMS; SIMS quantification; high sputtering rate
Rok RIV
2014
Vydáno
24.11.2014
ISSN
0142-2421
Ročník
46
Číslo
S1
Strany od–do
285–287
Počet stran
3
BIBTEX
@article{BUT110788,
author="F. A. {Stevie} and Jan {Čechal} and L. {Sedláček} and Petr {Bábor} and Jaroslav {Jiruše} and E. {Principe} and K. {Klosová},
title="FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources",
year="2014",
volume="46",
number="S1",
month="November",
pages="285--287",
issn="0142-2421"
}