Detail publikace

FIB-SIMS kvantifikace pomocí TOF-SIMS s využitím Ar a Xe plazmových zdrojů

STEVIE, F. SEDLÁČEK, L. BÁBOR, P. JIRUŠE, J. PRINCIPE, E. KLOSOVÁ, K.

Český název

FIB-SIMS kvantifikace pomocí TOF-SIMS s využitím Ar a Xe plazmových zdrojů

Anglický název

FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

en

Originální abstrakt

A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra-deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300-nm SiO2/Si implanted with BF2.

Český abstrakt

Publikace pojednává o použití TOF-SIMS spektrometru a plasmových zdrojů (Ar, Xe) ke kvantitativní analýze prvkového složení zkoumaných materiálů metodou hmotnostní spektroskopie sekundárních iontů.

Anglický abstrakt

A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra-deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300-nm SiO2/Si implanted with BF2.

Klíčová slova anglicky

SIMS depth profiling; plasma ion source; TOF-SIMS analyzer; FIB-SIMS; SIMS quantification; high sputtering rate

Rok RIV

2014

Vydáno

24.11.2014

ISSN

0142-2421

Ročník

46

Číslo

S1

Strany od–do

285–287

Počet stran

3

BIBTEX


@article{BUT110788,
  author="F. A. {Stevie} and Jan {Čechal} and L. {Sedláček} and Petr {Bábor} and Jaroslav {Jiruše} and E. {Principe} and K. {Klosová},
  title="FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources",
  year="2014",
  volume="46",
  number="S1",
  month="November",
  pages="285--287",
  issn="0142-2421"
}