Detail publikace
Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates
ROUČKA, R. TOLLE, J. CROZIER, P. TSONG, I. KOUVETAKIS, J. SMITH, D.
Anglický název
Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates
Typ
článek v časopise - ostatní, Jost
Jazyk
en
Originální abstrakt
Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.
Anglický abstrakt
Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.
Klíčová slova anglicky
MOLECULAR-BEAM EPITAXY, SILICON-CARBIDE, SOLID-SOLUTIONS, ALUMINUM NITRIDE, DEPOSITION, SYSTEM, ALN, AIN
Rok RIV
2002
Vydáno
23.10.2002
ISSN
0003-6951
Časopis
Applied Physics Letters
Ročník
79
Číslo
18
Počet stran
3
BIBTEX
@article{BUT40592,
author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and I. {Tsong} and J. {Kouvetakis} and D. J. {Smith},
title="Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates",
journal="Applied Physics Letters",
year="2002",
volume="79",
number="18",
month="October",
issn="0003-6951"
}