In situ měření plošné homogenity slabě absorbujících tenkých vrstev

In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films

článek v časopise - ostatní, Jost

en

In the paper the instrument working on the principles of spectral reflectivity and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool for the in situ quasi-real time monitoring of surface homogeneity of thicknesses and optical parameters of small area thin films (up to 1 cm2) during their etching and growth. By this method a homogeneous growth of an SiO2 film with an average growth rate of 103 nm/hour in one pilot point during the deposition by ion beam sputtering of a quartz target was monitored in situ. On the other hand, the ion beam etching rate of the thermal SiO2 film was lower than 3.3 nm/min and the enhanced roughness of the etched film in comparison to the initial one was observed.

V článku je popsán návrh, vývoj a testování funkce nového optického měřicího přístroje určeného ke stanovovování ex situ a in situ plošné homogenity růstu tenkých vrstev -- optických parametrů indexu lomu, koeficientu obsorbce a tloušťky tenké vrstvy. Základem je stanovení odrazivosti systému tenká vrstva – známý substrát v jednotlivých bodech povrchu (1 až 2 cm2) v UV – VIS oblasti dopadajícího světla. Dosažené výsledky dokazují vhodnost zvolené metody a použitelnost přístroje k širšímu uplatnění při řízení depoziční procesů výroby tenkých vrstev.

In the paper the instrument working on the principles of spectral reflectivity and designed in our group for in situ monitoring of surface homogeneity of optical parameters of weakly absorbing thin films was tested in a series of ex- and in situ experiments. The tests confirmed that it is a convenient tool for the in situ quasi-real time monitoring of surface homogeneity of thicknesses and optical parameters of small area thin films (up to 1 cm2) during their etching and growth. By this method a homogeneous growth of an SiO2 film with an average growth rate of 103 nm/hour in one pilot point during the deposition by ion beam sputtering of a quartz target was monitored in situ. On the other hand, the ion beam etching rate of the thermal SiO2 film was lower than 3.3 nm/min and the enhanced roughness of the etched film in comparison to the initial one was observed.

spectroscopic reflectometry, surface homogeneity, in situ monitoring

2002

01.08.2002

0142-2421

Surface and Interface Analysis

34

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