Detail publikace
Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis
TICHOPÁDEK, P. ŠIKOLA, T. NEBOJSA, A. ČECHAL, J.
Český název
Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis
Anglický název
Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
en
Originální abstrakt
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.
Český abstrakt
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.
Anglický abstrakt
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.
Klíčová slova anglicky
Spectroscopic Ellipsometry, Ultrathin Film
Rok RIV
2002
Vydáno
15.11.2001
Nakladatel
FEI VUT v Brně
Místo
Brno
ISBN
80-214-1992-X
Kniha
Sborník příspěvků konference Nové trendy ve fyzice
Počet stran
5
BIBTEX
@inproceedings{BUT6513,
author="Petr {Tichopádek} and Tomáš {Šikola} and Alois {Nebojsa} and Jan {Čechal},
title="Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis",
booktitle="Sborník příspěvků konference Nové trendy ve fyzice",
year="2001",
month="November",
publisher="FEI VUT v Brně",
address="Brno",
isbn="80-214-1992-X"
}