Detail publikace
Kvantitativní analýza růstu ultratenkých vrstev pomocí rozptylu nízkoenergetických iontů metodou time-of-flight
PRIMETZHOFER, D. MARKIN, S. ZEPPENFELD, P. BAUER, P. PRŮŠA, S. KOLÍBAL, M. ŠIKOLA, T.
Český název
Kvantitativní analýza růstu ultratenkých vrstev pomocí rozptylu nízkoenergetických iontů metodou time-of-flight
Anglický název
Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering
Typ
článek v časopise - ostatní, Jost
Jazyk
en
Originální abstrakt
Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.
Český abstrakt
Byla vyvinuta metoda kvantitativní analýzy růstu a morfologie (výška clusterů, zaplnění povrchu) ultratenkých vrstev zlata pomocí rozptylu nízkoenergetických iontů metodou time-of-flight.
Anglický abstrakt
Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computer simulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.
Klíčová slova česky
Rozptyl iontů, LEIS; Time-of-flight, ToF; Kvantitativní analýza
Klíčová slova anglicky
Low energy ion scattering, LEIS; Time-of-flight, ToF; Quantitative analysis
Rok RIV
2008
Vydáno
11.01.2008
ISSN
0003-6951
Časopis
Applied Physics Letters
Ročník
92
Číslo
1
Strany od–do
011929-1–011929-3
Počet stran
3
BIBTEX
@article{BUT43927,
author="Daniel {Primetzhofer} and S. N. {Markin} and Peter {Zeppenfeld} and P. {Bauer} and Peter {Bauer} and Stanislav {Průša} and Miroslav {Kolíbal} and Tomáš {Šikola},
title="Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering",
journal="Applied Physics Letters",
year="2008",
volume="92",
number="1",
month="January",
pages="011929-1--011929-3",
issn="0003-6951"
}